{"product_id":"0608041003327","title":"Me for the Inland Lakes","description":"Blagodarya postoyannomu sovershenstvovaniyu iskhodnykh materialov i tekhnologicheskikh protsessov kharakteristiki poluprovodnikovykh priborov i mikroskhem dostigayut vse bolee vysokikh urovney. Shirokoe ispol'zovanie poluprovodnikovykh geterostruktur dlya sozdaniya priborov tverdotel'noy SVCh elektroniki yavlyaetsya kharakternoy osobennost'yu sovremennogo etapa razvitiya tekhnologicheskikh bazisov SVCh priborov i integral'nykh skhem. Odnim iz naibolee perspektivnykh napravleniy razrabotki SVCh geterostrukturnykh elementov yavlyaetsya primenenie nitridov galliya pri sozdanii polevykh tranzistorov s vysokoy podvizhnost'yu elektronov v kanale na osnove geterostruktury AlGaN\/GaN. Sleduet otmetit', chto germaniy, nakhodivshiysya dostatochno dolgoe vremya za bortom mikroelektroniki, v nastoyashchee vremya v sostave geterostruktury SiGe yavlyaetsya perspektivnym materialom dlya sozdaniya SVCh priborov. Tsel'yu dannoy raboty yavlyaetsya obobshchenie rezul'tatov, poluchennykh pri issledovanii vliyaniya ioniziruyushchikh izlucheniy na kharakteristiki sovremennykh i perspektivnykh izdeliy tverdotel'noy SVCh elektroniki na osnove poluprovodnikovykh geterostruktur AlGaN\/GaN i SiGe.","brand":"Delia Remington","offers":[{"title":"Default Title","offer_id":47085091782896,"sku":"0608041003327","price":7.99,"currency_code":"USD","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0737\/7593\/9824\/files\/0608041003327_p0.jpg?v=1763469063","url":"https:\/\/shop-qa.barnesandnoble.com\/products\/0608041003327","provider":"Barnes \u0026 Noble (DEV)","version":"1.0","type":"link"}