{"product_id":"9780819443960","title":"Gallium-Nitride-based Technologies","description":"Eleven papers from the January 2002 conference present recent progress in epitaxial growth techniques for wide-bandgap nitrides, substrates for growth of low defect density wide-bandgap group-III nitrides, and wide-bandgap lasers. The contributors address the growth of nitride semiconductors by MBE and MOCVD, optoelectronic devices built on bulk gallium nitride substrates, and optical gain in nitride-based lasers. Other topics include the electronic structure of nitrogen-doped GaAs and GaP, long and short wavelength vertical cavity surface emitting lasers, and back-illuminated solar blind photodiodes. No index. Annotation c. Book News, Inc., Portland, OR  ","brand":"SPIE Press","offers":[{"title":"Default Title","offer_id":47021025853680,"sku":"9780819443960","price":78.0,"currency_code":"USD","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0737\/7593\/9824\/files\/9780819443960_p0.jpg?v=1763747168","url":"https:\/\/shop-qa.barnesandnoble.com\/products\/9780819443960","provider":"Barnes \u0026 Noble (DEV)","version":"1.0","type":"link"}