{"product_id":"9780863416422","title":"Properties of Indium Phosphide","description":"\u003cp\u003eIndium Phosphide is second only to Gallium Arsenide as a candidate material for improved devices. This volume, containing some 130 datareviews by over fifty authors from around the world, includes coverage of: basic properties; selected InGAs and InGaAsP properties; defects and their detection; surfaces; interfaces; oxidation; etching; ion implantation; and exploitation in devices.\u003c\/p\u003e","brand":"The Institution of Engineering and Technology","offers":[{"title":"Default Title","offer_id":47031908172016,"sku":"9780863416422","price":320.0,"currency_code":"USD","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0737\/7593\/9824\/files\/9780863416422_p0.jpg?v=1763833924","url":"https:\/\/shop-qa.barnesandnoble.com\/products\/9780863416422","provider":"Barnes \u0026 Noble (DEV)","version":"1.0","type":"link"}