{"product_id":"9789814365499","title":"Mosfet Modeling For Vlsi Simulation: Theory And Practice: Theory and Practice","description":"\u003cp\u003eA reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.\u003c\/p\u003e\u003cp\u003eThe book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.\u003c\/p\u003e\u003cb\u003eContents:\u003c\/b\u003e\u003cul\u003e\n\u003cli\u003eOverview\u003c\/li\u003e\n\u003cli\u003eReview of Basic Semiconductor and \u003ci\u003epn\u003c\/i\u003e Junction Theory\u003c\/li\u003e\n\u003cli\u003eMOS Transistor Structure and Operation\u003c\/li\u003e\n\u003cli\u003eMOS Capacitor\u003c\/li\u003e\n\u003cli\u003eThreshold Voltage\u003c\/li\u003e\n\u003cli\u003eMOSFET DC Model\u003c\/li\u003e\n\u003cli\u003eDynamic Model\u003c\/li\u003e\n\u003cli\u003eModeling Hot-Carrier Effects\u003c\/li\u003e\n\u003cli\u003eData Acquisition and Model Parameter Measurements\u003c\/li\u003e\n\u003cli\u003eModel Parameter Extraction Using Optimization Method\u003c\/li\u003e\n\u003cli\u003eSPICE Diode and MOSFET Models and Their Parameters\u003c\/li\u003e\n\u003cli\u003eStatistical Modeling and Worst-Case Design Parameters\u003c\/li\u003e\n\u003c\/ul\u003e\u003cbr\u003e\u003cb\u003eReadership:\u003c\/b\u003e Integrated circuit chip designers, device model developers and circuit simulators.\u003cbr\u003e","brand":"World Scientific Publishing Company, Incorporated","offers":[{"title":"Default Title","offer_id":47185340891376,"sku":"9789814365499","price":144.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0737\/7593\/9824\/files\/9789814365499_p0.jpg?v=1763690822","url":"https:\/\/shop-qa.barnesandnoble.com\/products\/9789814365499","provider":"Barnes \u0026 Noble (DEV)","version":"1.0","type":"link"}